FDS6692

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 12 A
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.012 Ohms


Features:

· 12 A, 30 V. R_DS(ON) = 12 mW    @ V_GS = 10 V.
                      R_DS(ON) = 14.5 mW @ V_GS = 4.5 V
· High performance trench technology for extremely low R_DS(ON)
· Low gate charge (18 nC typical)
· High power and current handling capability


Application

· DC/DC converter


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±16	V
ID	Drain Current Continuous (Note 1a)                       Pulsed	12	A
		50
PD	Power Dissipation for Single Operation (Note 1a)                                                               (Note 1b)                                                               (Note 1c)	2.5	W
		1.2
		1.0
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +175	°C

Description

This FDS6692 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R_DS(ON) and fast switching speed.