FDS6875

MOSFET SO-8 DUAL P-CH -20V

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FDS6875 Picture
SeekIC No. : 00146524 Detail

FDS6875: MOSFET SO-8 DUAL P-CH -20V

floor Price/Ceiling Price

US $ .43~.7 / Piece | Get Latest Price
Part Number:
FDS6875
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Processing time
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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 0.024 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.024 Ohms


Features:

-6 A, -20 V. = 0.030 W  @ VGS = -4.5 V  RDS(ON)            
                  = 0.040 W  @ VGS = -2.5 V RDS(ON)
Low gate charge (23nC typical).
High performance trench technology for extremely low RDS(ON)
High power and current handling capability.



Pinout

  Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage -20 V
VGSS Gate-Source Voltage ±8 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
- 6 A
- 20
PD Power Dissipation for Dual Operation (Note 1)
2 W
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 W
Thermal Characteristics      
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
78 °C/W
40
       



Description

These  FDS6875 P-Channel    2.5V specified   MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices FDS6875 are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.




Parameters:

Technical/Catalog InformationFDS6875
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs30 mOhm @ 6A, 4.5V
Input Capacitance (Ciss) @ Vds 2250pF @ 10V
Power - Max2W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs31nC @ 5V
Package / CaseSO-8
FET Feature*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS6875
FDS6875
FDS6875CT ND
FDS6875CTND
FDS6875CT



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