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MFG:FSC  D/C:SOP  

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Part Number: FDS6875

 

MFG: FSC

 

D/C: SOP

Description: These P-Channel 2.5V specified MOSFETs are produced using Fairchil...


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FDS6875 General Description


These  P-Channel    2.5V specified   MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.

FDS6875 Maximum Ratings

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage -20 V
VGSS Gate-Source Voltage ±8 V
ID Drain Current - Continuous (Note 1a)
- Pulsed 		- 6 A
- 20
PD Power Dissipation for Dual Operation (Note 1)
 2 W
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)		 1.6
1
0.9
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 W
Thermal Characteristics      
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)		 78 °C/W
40
       

FDS6875 Features

-6 A, -20 V. = 0.030 W  @ VGS = -4.5 V  RDS(ON)            
                  = 0.040 W  @ VGS = -2.5 V RDS(ON)
Low gate charge (23nC typical).
High performance trench technology for extremely low RDS(ON)
High power and current handling capability.

FDS6875 Connection Diagram

FDS6875 Connection Diagram

FDS6875 datasheet

FDS6875
PDF/DataSheet Download

  • Datasheet: FDS6875
  • File Size: 199327 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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Related Part Number

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