FDS6894AZ

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.017 Ohms
Continuous Drain Current : 8 A


Features:

8 A, 20 V. R_DS(ON)= 17 m @ V_GS = 4.5 V
                   R_DS(ON)= 20 m @ V_GS = 2.5 V
                   R_DS(ON)= 30 m @ V_GS = 1.8 V
Low gate charge (14 nC typical)
High performance trench technology for extremely low R_DS(ON)
High power and current handling capability


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current Continuous (Note 1a)	8	A
	Pulsed	32
PD	Power Dissipation for Dual Operation	2	W
	Power Dissipation for Single Operation (Note 1a)	1.6
	(Note 1b)	1
	(Note 1c)	0.9
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

These FDS6894AZ N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been  especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices FDS6894AZ are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parameters:

Technical/Catalog Information	FDS6894AZ
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	17 mOhm @ 8A, 4.5V
Input Capacitance (Ciss) @ Vds	1455pF @ 10V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	20nC @ 4.5V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6894AZ FDS6894AZ