FDS6898AZ

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 9.4 A
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 0.014 Ohms


Features:

9.4 A, 20 V R_DS(ON) = 14 m @ V_GS = 4.5 V
R_DS(ON) = 18 m @ V_GS = 2.5 V
Low gate charge (16 nC typical)
ESD protection diode
High performance trench technology for extremely low R_DS(ON)
High power and current handling capability




Pinout








Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current Continuous (Note 1a)	9.4	A
	Pulsed	38
PD	Power Dissipation for Dual Operation	2	W
	Power Dissipation for Single Operation (Note 1a)	1.6
	(Note 1b)	1
	(Note 1c)	0.9
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

These FDS6898AZ N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

The FDS6898AZ is designed as one kind of dual N-channel logic level PWM optimized PowerTrench MOSFET device that is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features of the FDS6898AZ are:(1)Low gate charge (16 nC typical); (2)ESD protection diode (note 3); (3)High performance trench technology for extremely low RDS(ON); (4)High power and current handling capability.

The absolute maximum ratings of the FDS6898AZ can be summarized as:(1)Drain-Source Voltage: 20 V;(2)Gate-Source Voltage: ±12 V;(3)Drain Current - Continuous: 9.4 A;(4)Drain Current - Pulsed: 38 A;(5)Power Dissipation for Dual Operation: 2 W;(6)Power Dissipation for Single Operation: 1.6 W;(7)Operating and Storage Junction Temperature Range: -55 to +150 °C. If you want to know more information such as the electrical characteristics about the FDS6898AZ, please download the datasheet in www.seekic.com or www.chinaicmart.com.

Parameters:

Technical/Catalog Information	FDS6898AZ
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	9.4A
Rds On (Max) @ Id, Vgs	14 mOhm @ 9.4A, 4.5V
Input Capacitance (Ciss) @ Vds	1821pF @ 10V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	23nC @ 4.5V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6898AZ FDS6898AZ FDS6898AZTR ND FDS6898AZTRND FDS6898AZTR