FDS6930B

MOSFET SO8 DUAL NCH LOGIC level POWER TRENCH

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SeekIC No. : 00152172 Detail

FDS6930B: MOSFET SO8 DUAL NCH LOGIC level POWER TRENCH

floor Price/Ceiling Price

US $ .27~.47 / Piece | Get Latest Price
Part Number:
FDS6930B
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 100~250
  • Unit Price
  • $.47
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  • Processing time
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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 5.5 A
Resistance Drain-Source RDS (on) : 0.038 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Continuous Drain Current : 5.5 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.038 Ohms


Features:

5.5 A, 30 V. RDS(ON) = 38 mΩ @ VGS = 10 V
                       RDS(ON) = 50 mΩ @ VGS = 4.5 V
Fast switching speed
Low gate charge
High performance trench technology for extremely low RDS(ON)
High power and current handling capability



Pinout

  Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current Continuous (Note 1a)
Pulsed
5.5 A
20
PD Power Dissipation for Dual Operation (Note 1) 2 W
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
TJ, TSTG Operating and Storage Junction Temperature Range 55 to 150 °C
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W



Description

These FDS6930B N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process thathas been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices FDS6930B are well suited for low voltage and battery pow-ered applications where low in-line power loss and fast switch-ng are required.




Parameters:

Technical/Catalog InformationFDS6930B
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C5.5A
Rds On (Max) @ Id, Vgs38 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds 412pF @ 15V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs3.8nC @ 5V
Package / CaseSO-8
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS6930B
FDS6930B
FDS6930BTR ND
FDS6930BTRND
FDS6930BTR



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