FDS6975

MOSFET SO-8 DUAL P-CH -30V

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SeekIC No. : 00149316 Detail

FDS6975: MOSFET SO-8 DUAL P-CH -30V

floor Price/Ceiling Price

US $ .46~.75 / Piece | Get Latest Price
Part Number:
FDS6975
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 100~250
  • Unit Price
  • $.75
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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 0.032 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Drain-Source Breakdown Voltage : - 30 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.032 Ohms


Features:

-6 A, -30 V. = 0.032 W  @ VGS = -10 V,R DS(ON)              
                   = 0.045 W  @ VGS = -4.5 V.R DS(ON)
Low gate charge (14.5nC typical).
High performance trench technology for extremely low RDS(ON)
High power and current handling capability.



Pinout

  Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
-6 A
-20
PD Power Dissipation for Dual Operation (Note 1)
2 W
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 W
Thermal Characteristics      
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
78 °C/W
40
       



Description

These FDS6975 P-Channel  Logic   Level  MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices FDS6975 are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.




Parameters:

Technical/Catalog InformationFDS6975
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs32 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 1540pF @ 15V
Power - Max2W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs20nC @ 5V
Package / CaseSO-8
FET Feature*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS6975
FDS6975
FDS6975CT ND
FDS6975CTND
FDS6975CT



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