Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Packaging
: Reel
Drain-Source Breakdown Voltage
: 30 V
Maximum Operating Temperature
: + 150 C
Package / Case
: SOIC-8
Configuration
: Dual
Resistance Drain-Source RDS (on)
: 0.02 Ohms
Gate-Source Breakdown Voltage
: +/- 16 V, +/- 20 V
Continuous Drain Current
: 6.5 A, 7.9 A
Features: • Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode
7.9A, 30V RDS(on) = 20 mΩ @ VGS = 10V
RDS(on) = 28 mΩ @ VGS = 4.5V
• Q1: Optimized for low switching losses Low gate charge (10 nC typical)
6.5A, 30V RDS(on) = 29 mΩ @ VGS = 10V
RDS(on) = 38 mΩ @ VGS = 4.5VSpecifications
| Symbol |
Parameter |
Q2 |
Q1 |
Units |
| VDSS |
Drain-Source Voltage |
30 |
30 |
V |
| VGSS |
Gate-Source Voltage |
±20 |
±16 |
V |
| ID |
Drain Current - Continuous (Note 1a)
- Pulsed |
7.9 |
6.5 |
|
|
30 |
20 |
| PD |
Power Dissipation for Dual Operation |
2 |
A |
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c) |
1.6 |
W |
|
1 |
|
0.9 |
| TJ, TSTG |
Operating and Storage Junction Temperature Range |
-55to+150 |
°C |
DescriptionThe FDS6986AS is designed to replace two single SO- 8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.
The FDS6986AS high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
Parameters: | Technical/Catalog Information | FDS6986AS |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 6.5A, 7.9A |
| Rds On (Max) @ Id, Vgs | 29 mOhm @ 6.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 550pF @ 10V |
| Power - Max | 900mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 17nC @ 10V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDS6986AS
FDS6986AS
|
FDS6986AS Data Sheet
