Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Packaging
: Reel
Drain-Source Breakdown Voltage
: 30 V
Maximum Operating Temperature
: + 150 C
Configuration
: Dual
Package / Case
: SOIC-8 Narrow
Resistance Drain-Source RDS (on)
: 0.029 Ohms
Gate-Source Breakdown Voltage
: +/- 16 V, +/- 20 V
Continuous Drain Current
: 6.5 A, 7.9 A
Features: • Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode
7.9A, 30V RDS(on)= 20 mΩ @ VGS = 10V
RDS(on)= 28 mΩ @ VGS = 4.5V
• Q1: Optimized for low switching losses Low gate charge (6.5 nC typical)
6.5A, 30V RDS(on)= 29 mΩ @ VGS = 10V
RDS(on)= 38 mΩ @ VGS = 4.5V
Application
Specifications
| Symbol |
Parameter |
Q2 |
Q1 |
Units |
| VDSS |
Drain-Source Voltage |
30 |
30 |
V |
| VGSS |
Gate-Source Voltage |
±20 |
±16 |
V |
| ID |
Drain Current - Continuous (Note 1a)
- Pulsed |
7.9 |
6.5 |
A |
| 30 |
20 |
| PD |
Power Dissipation for Dual Operation |
2 |
W |
|
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c) |
1.6 |
| 1 |
| 0.9 |
| TJ, TSTG |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
DescriptionThe FDS6986S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.
The FDS6986S high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
FDS6986S Data Sheet
