FDS6990A

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 7.5 A
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 0.011 Ohms


Features:

7.5 A, 30 V. R_DS(ON)= 18 m @ V_GS = 10 V
                     R_DS(ON)= 23 m @ V_GS = 4.5 V
Fast switching speed
Low gate charge
High performance trench technology for extremely low R_DS(ON)
High power and current handling capability


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (Note 1a)	7.5	A
	Pulsed	20
PD	Power Dissipation for Single Operation (Note 1a)	1.6	W
	(Note 1b)	1
	(Note 1c)	0.9
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

These FDS6990A N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parameters:

Technical/Catalog Information	FDS6990A
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	7.5A
Rds On (Max) @ Id, Vgs	18 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds	1235pF @ 15V
Power - Max	1.6W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	17nC @ 5V
Package / Case	SO-8
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6990A FDS6990A FDS6990ACT ND FDS6990ACTND FDS6990ACT