FDS7060N7

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8
Continuous Drain Current : 19 A
Configuration : Single Seven Source
Resistance Drain-Source RDS (on) : 0.016 Ohms, 0.01 Ohms


Features:

• 19 A, 30 V. R_DS(ON) = 5 mΩ  @ V_GS = 10 V
                     R_DS(ON) = 7 mΩ  @ V_GS = 4.5 V
• High performance trench technology for extremely low R_DS(ON)
• High power and current handling capability
• Fast switching, low gate charge (35nC typical)
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size


Application

• Synchronous rectifier
• DC/DC converter


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (Note 1a)                       Pulsed	19	A
		60
PD	Power Dissipation for Single Operation (Note 1a)	3.0	W
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +175	°C

Description

This FDS7060N7 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low R_DS(ON) in a small package.


Parameters:

Technical/Catalog Information	FDS7060N7
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	19A
Rds On (Max) @ Id, Vgs	5 mOhm @ 19A, 10V
Input Capacitance (Ciss) @ Vds	3274pF @ 15V
Power - Max	3W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	56nC @ 5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS7060N7 FDS7060N7 FDS7060N7DKR ND FDS7060N7DKRND FDS7060N7DKR