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Part Number: FDS9933
Description: This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench proce...


Description: This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench proce...
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
| Symbol |
Parameter |
Ratings |
Units |
| VDSS | Drain-Source Voltage |
-20 |
V |
| VGSS | Gate-Source Voltage |
±12 |
V |
| ID | Drain Current - Continuous (Note 1a) - Pulsed |
-5 |
A |
|
-30 | |||
| PD | Power Dissipation for Dual Operation |
3.0 |
W |
| Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
1.6 | ||
|
1 | |||
|
0.9 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range |
-55to+175 |
°C |
FDS9933
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