FDS9933

Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 55 m Ohms


Features:

` 5 A, 20 V,   R<sub>DS(ON)</sub> = 55 mW @ V<sub>GS</sub> = 4.5 V
                            R<sub>DS(ON)</sub> = 90 mW @ V<sub>GS</sub> = 2.5 V
` Extended VGSS range (±12V) for battery applications
` Low gate charge
` High performance trench technology for extremely low RDS(ON)
` High power and current handling capability


Application

· Load switch
· Motor drive
· DC/DC conversion
· Power management


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	-5	A
		-30
PD	Power Dissipation for Dual Operation	3.0	W
	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	1.6
		1
		0.9
TJ, TSTG	Operating and Storage Junction Temperature Range	-55to+175	°C

Description

This FDS9933 P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).

Parameters:

Technical/Catalog Information	FDS9933
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5A
Rds On (Max) @ Id, Vgs	55 mOhm @ 3.2A, 4.5V
Input Capacitance (Ciss) @ Vds	825pF @ 10V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	20nC @ 4.5V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS9933 FDS9933