FDS9953A

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.095 Ohms
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 2.9 A


Features:

2.9 A, 30 V R_DS(ON) = 130 m @ V_GS = 10 V
                         R_DS(ON) = 200 m @ V_GS = 4.5 V
Low gate charge (2.5nC typical)
Fast switching speed
High performance trench technology for extremely low R_DS(ON)
High power and current handling capability


Application

Power management
Load switch
Battery protection


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS	Drain-Source Voltage		-30	V
VGSS	Gate-Source Voltage		±25
ID	Drain Current	Continuous (Note 1a) Pulsed	±2.9	A
			±10
PD	Power Dissipation for Dual Operation		2	W
	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)	1.6
			1
			0.9
TJ, TSTG	Operating and Storage Junction Temperature Range		55 to +150	°C

Description

This FDS9953A P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).

Parameters:

Technical/Catalog Information	FDS9953A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	2.9A
Rds On (Max) @ Id, Vgs	130 mOhm @ 1A, 10V
Input Capacitance (Ciss) @ Vds	185pF @ 15V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	3.5nC @ 10V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS9953A FDS9953A