Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Configuration
: Dual Dual Drain
Drain-Source Breakdown Voltage
: - 60 V
Package / Case
: SOIC-8 Narrow
Continuous Drain Current
: - 2.9 A
Resistance Drain-Source RDS (on)
: 105 m Ohms
Specifications |
| FDS9958_F085 | Preliminary | RoHS Compliant | SO-8 | 8 | TAPE REEL | | Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&2 (2-Digit Date Code)
&K Line 2: FDS Line 3: 9958 |
Package marking information for product FDS9958_F085 is available. Click here for more information . |
DescriptionThese FDS9958_F085 P-channel logic level specified MOSFETs are producedusing Fairchild Semiconductor?s advanced PowerTrench?process that has been especially tailored to minimize theon-state resistance and yet maintain low gate charge for superiorswitching performance.
These devices FDS9958_F085 are well suited for portable electronicsapplications: load switching and power management, batterycharging and protection circuits.
Parameters: | Technical/Catalog Information | FDS9958_F085 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 2.9A |
| Rds On (Max) @ Id, Vgs | 105 mOhm @ 2.9A, 10V |
| Input Capacitance (Ciss) @ Vds | 1020pF @ 30V |
| Power - Max | 900mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 23nC @ 10V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDS9958_F085
FDS9958_F085
|
FDS9958_F085 Data Sheet
