FDT434P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SOT-223
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 0.05 Ohms


Features:

• 5.5 A, 20 V. R_DS(ON) = 0.050 Ω @ V_GS = 4.5 V
R_DS(ON) = 0.070 Ω @ V_GS = 2.5 V.
• Low gate charge (13nC typical)
• High performance trench technology for extremely low R_DS(ON) .
• High power and current handling capability in a widely used surface mount package.




Application

• Low Dropout Regulator
• DC/DC converter
• Load switch
• Motor driving




Pinout






Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current Continuous (Note 1a) Pulsed	-60	A
		-30
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	3.0	W
		1.3
		1.1
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

The FDT434P is a P-channel 2.5V specified powertrench MOSFET.This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Features of the FDT434P are:(1)5.5 A,20 V. RDS(ON) = 0.050 @ VGS =4.5 V,RDS(ON) = 0.070 @ VGS = 2.5 V; (2)low gate charge (13nC typical); (3)high performance trench technology for extremely low RDS(ON); (4)high power and current handling capability in a widely used surface mount package.This datasheet contains preliminary data, and supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

The absolute maximum ratings of the FDT434P can be summarized as:(1)drain-source voltage:-20 V;(2)storage temperature range:-55 to 150;(3)drain current:-30A;(4)operating junction temperature:-55 to 150;(5)power dissipation:3W;(6)gate-source voltage:±8V.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.

Parameters:

Technical/Catalog Information	FDT434P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	50 mOhm @ 6A, 4.5V
Input Capacitance (Ciss) @ Vds	1187pF @ 10V
Power - Max	1.1W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	19nC @ 4.5V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDT434P FDT434P FDT434PCT ND FDT434PCTND FDT434PCT