MOSFET LOW_VOLTAGE
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 35 A | ||
| Resistance Drain-Source RDS (on) : | 4.5 m Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | IPAK | Packaging : | Tube |
|
Symbol |
Parameter |
Ratings |
Units |
|
VDS |
Drain to Source Voltage |
25 |
V |
|
VGS |
Gate to Source Voltage |
±20 |
V |
|
ID |
Drain Current -Continuous (Package Limited) |
35 |
A |
| -Continuous (Die Limited) |
98 | ||
| -Pulsed 1 |
305 | ||
|
EAS |
Single Pulse Avalanche Energy 2 |
91 |
mJ |
|
PD |
Power Dissipation |
88 |
W |
|
TJ,TSTG |
Operating and Storage Temperature |
-55 to 175 |
°C |
This FDU8796 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
| Technical/Catalog Information | FDU8796 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 35A |
| Rds On (Max) @ Id, Vgs | 5.7 mOhm @ 35A, 10V |
| Input Capacitance (Ciss) @ Vds | 2610pF @ 13V |
| Power - Max | 88W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 52nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDU8796 FDU8796 |