FDV301N

MOSFET N-Ch Digital

product image

FDV301N Picture
SeekIC No. : 00146332 Detail

FDV301N: MOSFET N-Ch Digital

floor Price/Ceiling Price

US $ .05~.15 / Piece | Get Latest Price
Part Number:
FDV301N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.15
  • $.13
  • $.08
  • $.05
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/25

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : 8 V Continuous Drain Current : 0.22 A
Resistance Drain-Source RDS (on) : 5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : 8 V
Resistance Drain-Source RDS (on) : 5 Ohms
Continuous Drain Current : 0.22 A


Features:

25 V, 0.22 A  continuous, 0.5 A Peak. RDS(ON)  = 5   @ VGS = 2.7 V    RDS(ON) = 4 @ VGS = 4.5 V.
Very low level gate drive requirements allowing  direct operation in 3V circuits. VGS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
Replace multiple NPN digital transistors with one DMOS FET.




Pinout

  Connection Diagram


Specifications

Symbol Parameter FDV301N Units
VDSS , VCC
Drain-Source Voltage, Power Supply Voltage 25 V
VGSS , VI
Gate-Source Voltage, VIN 8 V
ID , IO
Drain/Output Current - Continuous 0.22 A
0.5
PD Maximum Power Dissipation 0.35 W
TJ,TSTG
Operating and Storage Temperature Range -55 to 150 °C
ESD Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
6.0 kV



Description

This FDV301N N-Channel logic level enhancement mode  field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.  This device FDV301N has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.


Parameters:

Technical/Catalog InformationFDV301N
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C220mA
Rds On (Max) @ Id, Vgs4 Ohm @ 400mA, 4.5V
Input Capacitance (Ciss) @ Vds 9.5pF @ 10V
Power - Max350mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs0.7nC @ 4.5V
Package / CaseSOT-23
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDV301N
FDV301N
FDV301NDKR ND
FDV301NDKRND
FDV301NDKR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Cable Assemblies
Line Protection, Backups
Connectors, Interconnects
Inductors, Coils, Chokes
RF and RFID
View more