Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Packaging
: Reel
Maximum Operating Temperature
: + 150 C
Drain-Source Breakdown Voltage
: 20 V
Continuous Drain Current
: 5.5 A
Gate-Source Breakdown Voltage
: +/- 12 V
Package / Case
: TSSOP-8
Resistance Drain-Source RDS (on)
: 18 m Ohms
Configuration
: Dual Dual Source
Features: 6 A, 20 V. RDS(ON) = 0.018 @ VGS = 4.5V
RDS(ON) = 0.028 @ VGS = 2.5V
Extended VGSS range (±12V) for battery applications.
ESD protection diode (note 3).
High performance trench technology for extremelylow RDS(ON)
Low profile TSSOP-8 package
Low profile TSSOP-8 package
ApplicationLoad switch
Motor drive
DC/DC conversion
Power management
Specifications
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
20 |
V |
|
VGSS |
Gate-Source Voltage |
±12 |
V |
|
ID |
Drain Current - Continuous (Note 1a)
- Pulsed |
6 |
A |
|
30 |
|
PD |
Power Dissipation (Note 1a)
(Note 1b) |
1.0 |
W |
|
0.6 |
|
TJ, TSTG |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
DescriptionThis N-Channel 2.5V specified MOSFET FDW2501NZ is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
Parameters: | Technical/Catalog Information | FDW2501NZ |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 5.5A |
| Rds On (Max) @ Id, Vgs | 18 mOhm @ 5.5A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 1286pF @ 10V |
| Power - Max | 600mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 17nC @ 4.5V |
| Package / Case | 8-TSSOP |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDW2501NZ
FDW2501NZ
|
FDW2501NZ Data Sheet
