FDW6923

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Single Dual Source
Resistance Drain-Source RDS (on) : 0.045 Ohms
Package / Case : TSSOP-8
Continuous Drain Current : - 3.5 A


Features:

3.5 A,  20 V. R_DS(ON) = 0.045 @ V_GS = 4.5 V
                             R_DS(ON) = 0.075 @ V_GS = 2.5 V
V_F < 0.55 V @ 1 A
High performance trench technology for extremely low RDS(ON) 
Low profile TSSOP-8 package


Application

DC/DC conversion


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	- 20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current Continuous (Note 1a) Pulsed	3.5	A
		30
PD	MOSFET Power Dissipation (minimum pad)       (Note 1) Schottky Power Dissipation (minimum pad)       (Note 1)	1.2	W
		1.0
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150

Description

This P-Channel 2.5V specified MOSFET FDW6923 is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process.  FDW6923 is combined with a low  forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter applications.


Parameters:

Technical/Catalog Information	FDW6923
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3.5A
Rds On (Max) @ Id, Vgs	45 mOhm @ 3.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1030pF @ 10V
Power - Max	1.2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	16nC @ 4.5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDW6923 FDW6923