FDY1002PZ

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SC-89-6
Continuous Drain Current : 0.83 A
Resistance Drain-Source RDS (on) : 500 mOhms at 4.5 V


Specifications

      

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FDY1002PZ	Full Production	RoHS Compliant	$0.21	SC89	6	TAPE REEL		Line 1: &2 (2-Digit Date Code) G

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDY1002PZ is available. Click here for more information .

Description

This Dual P-Channel MOSFET FDY1002PZ has been designed using Fairchild Semiconductor?s advanced Power Trench process to optimize the

r_DS(on)@V_GS = ?1.5 V.

Parameters:

Technical/Catalog Information	FDY1002PZ
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	830mA
Rds On (Max) @ Id, Vgs	500 mOhm @ 830mA, 4.5V
Input Capacitance (Ciss) @ Vds	135pF @ 10V
Power - Max	446mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	3.1nC @ 4.5V
Package / Case	SC-89-6, SOT-666
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDY1002PZ FDY1002PZ FDY1002PZTR ND FDY1002PZTRND FDY1002PZTR