FDZ209N

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 0.08 Ohms
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 4 A
Package / Case : BGA
Configuration : Single Hex Drain Quint Source


Features:

4 A, 60 V.  R_DS(ON) = 80 m@ V_GS = 5 V 
Occupies only 5 mm²  of PCB area:  only 55% of the area of SSOT-6
Ultra-thin package:  less than 0.80 mm height when mounted to PCB
Outstanding thermal transfer characteristics: 4 times better than SSOT-6
Ultra-low Qg x R_DS(ON) figure-of-merit
High power and current handling capability


Application

Solenoid Drivers


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	60	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (Note 1a) Pulsed	4	A
		20
PD	Power Dissipation (Steady State) (Note 1a)	2	W
TJ, Tstg	Operating and Storage Junction Temperature Range	55 to +150

Description

Combining Fairchild's advanced PowerTrench process with  state-of-the-art  BGA  packaging,  the  FDZ209N minimizes  both  PCB  space  and  RDS(ON).    This  BGA
MOSFET  embodies  a  breakthrough  in  packaging technology  which  enables  the  device  to  combine excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate charge, and low R_DS(ON).  


Parameters:

Technical/Catalog Information	FDZ209N
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	80 mOhm @ 4A, 5V
Input Capacitance (Ciss) @ Vds	657pF @ 30V
Power - Max	2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	9nC @ 5V
Package / Case	BGA
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDZ209N FDZ209N FDZ209NCT ND FDZ209NCTND FDZ209NCT