MOSFET 2.5V PCH BGA 1.5x1.5 SPECIFIED POWRTRENCH
FDZ293P: MOSFET 2.5V PCH BGA 1.5x1.5 SPECIFIED POWRTRENCH
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
| Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 4.6 A | ||
| Resistance Drain-Source RDS (on) : | 0.034 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | BGA | Packaging : | Reel |
|
Symbol |
Parameter |
Ratings |
Units |
| VDSS | Drain-Source Voltage |
-20 |
V |
| VGS | Gate-Source Voltage |
±12 |
V |
| ID | Drain Current Continuous (Note 1a) Pulsed |
-4.6 |
A
|
|
-10 | |||
| PD | Power Dissipation for Single Operation(Note 1a) |
1.7 |
W |
| TJ, TSTG | Operating and Storage Temperature |
-55 to 150 |
Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ293P minimizes both PCB space and R DS(ON) . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low R DS(ON)
.
| Technical/Catalog Information | FDZ293P |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 4.6A |
| Rds On (Max) @ Id, Vgs | 46 mOhm @ 4.6A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 754pF @ 10V |
| Power - Max | 1.7W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 11nC @ 4.5V |
| Package / Case | BGA |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDZ293P FDZ293P |