FDZ293P

MOSFET 2.5V PCH BGA 1.5x1.5 SPECIFIED POWRTRENCH

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SeekIC No. : 00163492 Detail

FDZ293P: MOSFET 2.5V PCH BGA 1.5x1.5 SPECIFIED POWRTRENCH

floor Price/Ceiling Price

Part Number:
FDZ293P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 4.6 A
Resistance Drain-Source RDS (on) : 0.034 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : BGA Packaging : Reel    

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 0.034 Ohms
Continuous Drain Current : 4.6 A
Package / Case : BGA


Features:

`4.6 A, 20 V R DS(ON) = 46 mΩ @ VGS= 4.5 V
                        RDS(ON)= 72 mΩ@ VGS= 2.5 V
`Occupies only 2.25 mm2of PCB area. Less than 50% of the area of a SSOT-6
`Ultra-thin package: less than 0.85 mm height when mounted to PCB
`Outstanding thermal transfer characteristics: 4 times better than SSOT-6
`Ultra-low Qg x RDS(ON)figure-of-merit
`High power and current handling capability.



Application

·Battery management
·Load switch
·Battery protection



Specifications

Symbol
Parameter
Ratings
Units
VDSS Drain-Source Voltage
-20
V
VGS Gate-Source Voltage
±12
V
ID Drain Current Continuous (Note 1a)
Pulsed
-4.6
A
-10
PD Power Dissipation for Single Operation(Note 1a)
1.7
W
TJ, TSTG Operating and Storage Temperature
-55 to 150



Description

Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ293P minimizes both PCB space and R DS(ON) . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low R DS(ON)
.




Parameters:

Technical/Catalog InformationFDZ293P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C4.6A
Rds On (Max) @ Id, Vgs46 mOhm @ 4.6A, 4.5V
Input Capacitance (Ciss) @ Vds 754pF @ 10V
Power - Max1.7W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs11nC @ 4.5V
Package / CaseBGA
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDZ293P
FDZ293P



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