FDZ5047N

MOSFET 30V/20V NCh MOSFET

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SeekIC No. : 00160489 Detail

FDZ5047N: MOSFET 30V/20V NCh MOSFET

floor Price/Ceiling Price

Part Number:
FDZ5047N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 22 A
Resistance Drain-Source RDS (on) : 0.0029 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : BGA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 22 A
Package / Case : BGA
Resistance Drain-Source RDS (on) : 0.0029 Ohms


Features:

22 A, 30 V.  RDS(ON) = 2.9 m @ VGS = 10 V
                      RDS(ON) = 4.5 m @ VGS = 4.5 V
Occupies only 27.5 mm2  of PCB area: 1/5 of the area of a TO-220 package
Ultra-thin package:  less than 0.90 mm height when mounted to PCB
Outstanding thermal transfer characteristics
Ultra-low gate charge x RDS(ON)  product



Application

DC/DC converters
Solenoid drive



Pinout

  Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20
ID Drain Current Continuous (Note 1a)
Pulsed
22 A
PD   75 W
Total Power Dissipation @ TA = 25°C 2.8
TJ, TSTG Operating and Storage Junction Temperature Range 50 to +150  



Description

Combining Fairchild's 30V PowerTrench process with state of the art BGA packaging, the FDZ5047N  minimizes both PCB space and RDS(ON).  This BGA  MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON).

These MOSFETs FDZ5047N feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)  specifications resulting in DC/DC power supply  designs with higher overall efficiency.




Parameters:

Technical/Catalog InformationFDZ5047N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C22A
Rds On (Max) @ Id, Vgs2.9 mOhm @ 22A, 10V
Input Capacitance (Ciss) @ Vds 4993pF @ 15V
Power - Max2.8W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs73nC @ 5V
Package / CaseBGA
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDZ5047N
FDZ5047N



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