FDZ7064S

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 13.5 A
Gate-Source Breakdown Voltage : +/- 16 V
Package / Case : BGA-30
Resistance Drain-Source RDS (on) : 0.0072 Ohms


Features:

13.5 A, 30 V.  R_DS(ON) = 7 m @ V_GS = 10 V
                         R_DS(ON) = 9 m @ V_GS = 4.5 V
Occupies only 14 mm²  of PCB area.  Only 42% of the area of SO-8
Ultra-thin package:  less than 0.8 mm height when mounted to PCB
3.5 x 4 mm²  Footprint
High power and current handling capability.


Application

DC/DC converters


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±16	V
ID	Drain Current Continuous (Note 1a) Pulsed	13.5	A
		60
PD	Power Dissipation (Steady State) (Note 1a)	2.2	W
TJ, Tstg	Operating and Storage Junction Temperature Range	55 to +150

Description

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.  Combining  Fairchild's  30V  PowerTrenchSyncFET process with state of the art BGA packaging, the FDZ7064S minimizes both PCB space and RDS(ON).  This BGA SyncFET embodies a breakthrough in both packaging and power MOSFET integration which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low
gate  charge,  ultra-low  reverse  recovery  charge  and  low R_DS(ON).