FF150R12KE3G

Packaging :
Collector-Emitter Saturation Voltage : 1.7 V
Product : IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Operating Temperature : + 125 C
Configuration : Dual
Gate-Emitter Leakage Current : 400 nA
Package / Case : 62MM
Continuous Collector Current at 25 C : 225 A
Power Dissipation : 780 W


Description

The FF150R12KE3G is designed as one kind of IGBT-Module device that has some points of electrical properties:(1)collector emitter voltage: 1200 V;(2)DC collector current: 225 A (Tc= 25°C) or 150 A (Tc= 80°C);(3)repetitive peak collector current: 300 A;(4)total power dissipation: 780 W;(5)gate emitter peak voltage: +/- 20 V;(6)DC forward current: 300 A;(7)repetitive peak forward current: 600 A;(8)insulation test voltage: 2.5 kV.

The thermal properties of the FF150R12KE3G can be summarized as:(1)thermal resistance, junction to case DC (transistor inverter): 0.085 K/W;(2)thermal resistance, junction to case DC (diode inverter): 0.15 K/W;(3)thermal resistance, case to heatsink: 0.01 K/W;(4)maximum junction temperature: 150 ;(5)operation temperature: -40 to +125 ;(6)storage temperature:-40 to +125 . If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .