FF1N30HS60DD

Product : Ultra Fast Recovery Rectifiers
Reverse Voltage : 600 V
Mounting Style : SMD/SMT
Package / Case : SOT-227
Recovery Time : 45 ns
Forward Continuous Current : 30 A
Packaging : Tube
Reverse Current IR : 100 ua
Configuration : Dual Parallel
Max Surge Current : 325 A
Forward Voltage Drop : 2.4 V


Features:

• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . t_b / ta > 1.2
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t_rr < 35ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Fully Isolated Package (2,500 volt AC)
• Extremely Low Switching Losses
• Avalanche Energy Rated



Application

• Switch Mode Power Supplies
• Hard Switched CCM PFC Boost Diode
• UPS and Motor Drive Free Wheeling Diode
• SMPS FWD
• Snubber Diode


Specifications

Symbol	Parameter	Ratings	Units
VRRM	Repetitive Peak Reverse Voltage	600	V
VRWM	Working Peak Reverse Voltage	600	V
VR	DC Blocking Voltage	600	V
IF(AV)	Average Rectified Forward Current (TC = 110oC)	30	A
IFRM	Repetitive Peak Surge Current (20kHz Square Wave)	70	A
IFSM	Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)	325	A
PD	Power Dissipation	136	W
EAVL	Avalanche Energy (1A, 40mH)	20	mJ
TJ, TSTG	Operating and Storage Temperature Range	-55 to 175	°C
Md	Mounting force Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
TL TPKG	Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334	300 260	°C °C

Description

The FF1N30HS60DD is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications.The Stealth™ family exhibits low reverse recovery current (I_RM(REC)) and exceptionally soft recovery under typical operating conditions.

This device FF1N30HS60DD is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.

Formerly developmental type TA49411.