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FGA180N30DTU

IGBT Transistors TBD

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SeekIC No. : 00143799 Detail

FGA180N30DTU: IGBT Transistors TBD

FGA180N30DTU Data Sheet

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Part Number:
FGA180N30DTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 300 V
Collector-Emitter Saturation Voltage : 1.9 V Maximum Gate Emitter Voltage : +/- 30 V
Gate-Emitter Leakage Current : +/- 250 nA Power Dissipation : 480 W
Maximum Operating Temperature : + 150 C Package / Case : TO-3P-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 30 V
Collector-Emitter Saturation Voltage : 1.9 V
Collector- Emitter Voltage VCEO Max : 300 V
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-3P-3
Power Dissipation : 480 W


Parameters:

Technical/Catalog InformationFGA180N30DTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)300V
Current - Collector (Ic) (Max)180A
Vce(on) (Max) @ Vge, Ic1.4V @ 15V, 40A
Power - Max480W
Mounting TypeThrough Hole
Package / CaseTO-3P
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FGA180N30DTU
FGA180N30DTU



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