FGA25N120FTD

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 25 V
Package / Case : TO-3PN-3


Specifications

      

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FGA25N120FTD	Full Production	RoHS Compliant	$4.42	TO-3PN	3	RAIL		Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FGA25N120 Line 3: FTD

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FGA25N120FTD is available. Click here for more information .

Description

Using advanced field stop trench technology, Fairchild's 1200V trench IGBTs FGA25N120FTD offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications.

Parameters:

Technical/Catalog Information	FGA25N120FTD
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	50A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 25A
Power - Max	313W
Mounting Type	Through Hole
Package / Case	TO-3P
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FGA25N120FTD FGA25N120FTD