IGBT Transistors 600V IGBT HID Application
FGD3N60LSDTM: IGBT Transistors 600V IGBT HID Application
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
| Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | DPAK-3 | Packaging : | Reel |
| Technical/Catalog Information | FGD3N60LSDTM |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 6A |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 10V, 3A |
| Power - Max | 40W |
| Mounting Type | Surface Mount |
| Package / Case | DPak, TO-252 (2 leads + tab) |
| Packaging | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FGD3N60LSDTM FGD3N60LSDTM FGD3N60LSDTMTR ND FGD3N60LSDTMTRND FGD3N60LSDTMTR |