IGBT Transistors 1000V 40A Field Stop Trench IGBT
FGH40T100SMD: IGBT Transistors 1000V 40A Field Stop Trench IGBT
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SpecificationsProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage Drawin...
| Collector- Emitter Voltage VCEO Max : | 1000 V | Collector-Emitter Saturation Voltage : | 2.3 V |
| Maximum Gate Emitter Voltage : | 20 V | Continuous Collector Current at 25 C : | 80 A |
| Gate-Emitter Leakage Current : | 500 nA | Power Dissipation : | 333 W |
| Maximum Operating Temperature : | + 175 C | Package / Case : | TO-247 |
| Packaging : | Tube |