FGH50N3

Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 300 V
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-247-3
Continuous Collector Current at 25 C : 75 A
Power Dissipation : 463 W
Collector-Emitter Saturation Voltage : 1.3 V


Features:

• Low VCE(SAT) . . . . . . . . . . . . . . . . . . . < 1.4V max
• Low EOFF . . . . . . . . . . . . . . . . . . . . . . . . . < 200µJ
• SCWT (@ TJ = 125°C). . . . . . . . . . . . . . . . . > 8µs
• 300V Switching SOA Capability
• Positive VCE(SAT) Temperature Coefficient above 50A


Specifications

Symbol	Parameter	Ratings	Units
BVCES	Collector to Emitter Breakdown Voltage	300	V
IC25	Collector Current Continuous, TC = 25°C	75	A
IC110	Collector Current Continuous, TC = 110°C	75	A
ICM	Collector Current Pulsed (Note 1)	240	A
VGES	Gate to Emitter Voltage Continuous	±20	V
VGEM	Gate to Emitter Voltage Pulsed	±30	V
SSOA	Switching Safe Operating Area at TJ = 150°C, Figure 2	150A at 300V
EAS	Single Pulse Avalanche Energy, ICE = 30A, L = 1.78mH, VDD = 50V	800	mJ
EARV	Single Pulse Reverse Avalanche Energy, IEC = 30A, L = 1.78mH, VDD = 50V	800	mJ
PD	Power Dissipation Total TC = 25°C	463	W
	Power Dissipation Derating TC > 25°C	3.7	W/°C
TJ	Operating Junction Temperature Range	-55 to 150	°C
TSTG	Storage Junction Temperature Range	-55 to 150	°C
tSC	Short Circuit Withstand Time (Note 2)	8	µs

NOTE:
1. Pulse width limited by maximum junction temperature.
2. V_CE(PK) = 180V, T_J = 125°C, V_GE = 12Vdc, R_G = 5Ω


Description

The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. FGH50N3 has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. FGH50N3 has been optimized for medium frequency switch mode power supplies.

Parameters:

Technical/Catalog Information	FGH50N3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	300V
Current - Collector (Ic) (Max)	75A
Vce(on) (Max) @ Vge, Ic	1.4V @ 15V, 30A
Power - Max	463W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FGH50N3 FGH50N3