FGH60N6S2

IGBT Transistors Sgl 600V N-Ch

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SeekIC No. : 00143697 Detail

FGH60N6S2: IGBT Transistors Sgl 600V N-Ch

floor Price/Ceiling Price

Part Number:
FGH60N6S2
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.9 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 75 A Gate-Emitter Leakage Current : +/- 250 nA
Power Dissipation : 625 W Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.9 V
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-247-3
Continuous Collector Current at 25 C : 75 A
Power Dissipation : 625 W


Features:

* 100kHz Operation at 390V, 52A
* 200kHZ Operation at 390V, 31A
* 600V Switching SOA Capability
* Typical Fall Time. . . . . . 77ns at TJ = 125
* Low Gate Charge  . . .140nC at VGE  = 15V
* Low Plateau Voltage  . . . . . . .6.5V Typical
* UIS Rated  . . . . . . . . . . . . . . . .. . . .700mJ
* Low Conduction Loss



Specifications

Symbol

Parameter

Ratings

Units

BVCES

Collector to Emitter Breakdown Voltage

600

V

IC25

Collector Current Continuous, TC = 25°C

75

A

IC110

Collector Current Continuous, TC = 110°C

75

A

ICM

Collector Current Pulsed (Note 1)

320

A

VGES

Gate to Emitter Voltage Continuous

±20

V

VGEM

Gate to Emitter Voltage Pulsed

±30

V

SSOA

Switching Safe Operating Area at TJ = 150°C, Figure 2

200A at 600V

 

EAS

Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V

700

mJ

PD

Power Dissipation Total TC = 25°C

625

W

 

Power Dissipation Derating TC > 25°C

5

W/°C

TJ

Operating Junction Temperature Range

-55 to 150

°C

TSTG

Storage Junction Temperature Range

-55 to 150

°C




Description

The FGH60N6S2 is a Low Gate Charge, Low Plateau Volt- age SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. FGH60N6S2 are ideally suited for high volt- age switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC FGH60N6S2 have been specially de- signed for: 
* Power Factor Correction (PFC) circuits
* Full bridge topologies
* Half bridge topologies
* Push-Pull circuits
* Uninterruptible power supplies
* Zero voltage and zero current switching circuits  




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