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FGS15N40L

Features: • High Input Impedance• High Peak Current Capability (130A)• Easy Gate DriveApplication• Strobe FlashSpecifications Symbol Description FGS15N40L Units VCES Collector-Emitter Voltage 400 V VGES Gate-Emitter Voltage ±6 V ICM ...

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SeekIC No. : 004341491 Detail

FGS15N40L: Features: • High Input Impedance• High Peak Current Capability (130A)• Easy Gate DriveApplication• Strobe FlashSpecifications Symbol Description FGS15N40L U...

FGS15N40L Data Sheet

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Part Number:
FGS15N40L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Features:

• High Input Impedance
• High Peak Current Capability (130A)
• Easy Gate Drive


Application

• Strobe Flash


Specifications

Symbol
Description
FGS15N40L
Units
VCES Collector-Emitter Voltage
400
V
VGES Gate-Emitter Voltage
±6
V
ICM (1) Pulsed Collector Current
130
A
PC Maximum Power Dissipation @ Ta = 25°C
2.0
W
TJ Operating Junction Temperature
-40 to +150
°C
Tstg Storage Temperature Range
-40 to +150
°C
TL Maximum Lead Temp. for soldering
PurPoses from case for 5 secnds
300
°C



Description

Insulated Gate Bipolar Transistors(IGBTs)FGS15N40L with trench ate structure have superior performance in conductance nd switching to planar gate structure and also have wide oise immunity. These devices are well suitable for trobe application




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