FII50-12E

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Configuration : Dual
Package / Case : ISOPLUS i4-PAC-5


Features:

• NPT³ IGBT
- low saturation voltage
- positive temperature coefficient for easy paralleling
- fast switching
- short tail current for optimized performance in resonant circuits
• HiPerFRED^TM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• ISOPLUS i4-PAC^TM package
- isolated back surface
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873


Application

• single phaseleg
- buck-boost chopper
• H bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
• three phase bridge
- AC drives
- controlled rectifier


Parameters:

Technical/Catalog Information	FII50-12E
Vendor	IXYS
Category	Discrete Semiconductor Products
Configuration	Half Bridge
Input	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	50A
Power - Max	200W
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 30A
Current - Collector Cutoff (Max)	400A
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	2nF @ 25V
Mounting Type	Through Hole
Package / Case	ISOPLUS i4-PAC?
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FII50 12E FII5012E