FIO50-12BD

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : ISOPLUS i4-PAC-5


Features:

• IGBT
- low saturation voltage
- positive temperature coefficient for easy paralleling
- fast switching
- short tail current for optimized performance in resonant circuits
• HiPerFREDTM diodes
- fast reverse recovery
- low operating forward voltage
- low leakage current
• ISOPLUS i4-PACTM package
- isolated back surface
- low coupling capacity between pins and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline


Application

switches to control bidirectional current flow by a single control signal:
• matrix converters
• spare matrix converters
• AC controllers


Parameters:

Technical/Catalog Information	FIO50-12BD
Vendor	IXYS
Category	Discrete Semiconductor Products
Input Type	-
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	200A
Vce(on) (Max) @ Vge, Ic	-
Power - Max	-
Mounting Type	Chassis Mount
Package / Case	INT-A-Pak
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FIO50 12BD FIO5012BD