FJP13007TU

Transistors Bipolar (BJT) NPN Sil Transistor

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SeekIC No. : 00205003 Detail

FJP13007TU: Transistors Bipolar (BJT) NPN Sil Transistor

floor Price/Ceiling Price

US $ .21~.36 / Piece | Get Latest Price
Part Number:
FJP13007TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.36
  • $.32
  • $.28
  • $.21
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 400 V
Emitter- Base Voltage VEBO : 9 V Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 8 Configuration : Single
Maximum Operating Frequency : 4 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
DC Collector/Base Gain hfe Min : 8
Packaging : Tube
Maximum DC Collector Current : 8 A
Package / Case : TO-220
Emitter- Base Voltage VEBO : 9 V
Maximum Operating Frequency : 4 MHz


Description

The feature of FJP13007TU are as follows: (1)High Voltage Capability; (2)High Switching Speed; (3)Suitable for Electronic Ballast and Switching Mode Power Supply.

The absolute maximum ratings of the FJP13007TU are: (1)collector-base voltage: 700 V; (2)collector-emitter voltage: 400 V; (3)emitter-base voltage: 9 V; (4)collector current (DC): 8 A; (5)collector current (pulse): 16 A; (6)base current: 4 A; (7)collector dissipation (TC = 25°C): 80 W; (8)junction temperature: 150 °C; (9)storage temperature: -65 ~ 150 °C.

The following is about the electrical characteristics of FJP13007TU: (1)Collector-Emitter Breakdown Voltage: 400V min at IC = 10mA, IB = 0; (2)Emitter Cut-off Current: 1mA max at VEB = 9V, IC = 0; (3)DC Current Gain *: 8 min and 60 max at VCE = 5V, IC = 2A, 5 min and 30 max at VCE = 5V, IC = 5A; (4)Collector-Emitter Saturation Voltage: 1.0V at IC = 2A, IB = 0.4A; (5)Base-Emitter Saturation Voltage: 1.2V at IC = 2A, IB = 0.4A; (6)Current Gain Bandwidth Product: 4MHz at VCE = 10V, IC = 0.5A; (7)Output Capacitance: 110 pF typical at VCB = 10V, f = 0.1MHz; (8)Turn On Time: 1.6s at VCC = 125V, IC = 5A, IB1 = -IB2 = 1A, RL = 25.




Parameters:

Technical/Catalog InformationFJP13007TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)8A
Power - Max80W
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 2A
Frequency - Transition4MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FJP13007TU
FJP13007TU



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