FJP5554

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Collector- Emitter Voltage VCEO Max : 400 V
Packaging : Tube
Package / Case : TO-220
DC Collector/Base Gain hfe Min : 45
Emitter- Base Voltage VEBO : 15 V


Features:

* Fast Speed Switching
* Wide Safe Operating Area
* Suitable for Electronic Ballast Application


Specifications

Symbol	Parameter	Value	Units
VCBO	Collector-Base Voltage	1050	V
VCEO	Collector-Emitter Voltage	400	V
VEBO	Emitter-Base Voltage	15	V
IC	Collector Current	4	A
ICP	* Collector Current (Pulse)	8	A
PC	Collector Dissipation (T = 25°C) C	70	W
TJ	Junction Temperature	150	°C
TSTG	Storage Temperature	-55 ~ 150	°C

Parameters:

Technical/Catalog Information	FJP5554
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	4A
Power - Max	70W
DC Current Gain (hFE) (Min) @ Ic, Vce	45 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic	500mV @ 200mA, 1A
Frequency - Transition	-
Current - Collector Cutoff (Max)	250A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FJP5554 FJP5554