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FLC167WF

Features: • High Output Power: P1dB = 31.8dBm(Typ.)• High Gain: G1dB = 7.5dB(Typ.)• High PAE: add = 35%(Typ.)• Proven Reliability• Hermetic Metal/Ceramic PackageSpecifications Item Symbol Condition Rating Unit. Drain-Source Voltage VDS 15 V Gate-...

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SeekIC No. : 004341978 Detail

FLC167WF: Features: • High Output Power: P1dB = 31.8dBm(Typ.)• High Gain: G1dB = 7.5dB(Typ.)• High PAE: add = 35%(Typ.)• Proven Reliability• Hermetic Metal/Ceramic PackageSpecifi...

FLC167WF Data Sheet

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Part Number:
FLC167WF
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High Output Power: P1dB = 31.8dBm(Typ.)
• High Gain: G1dB = 7.5dB(Typ.)
• High PAE: add = 35%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package


Specifications

Item Symbol

Condition

 Rating Unit.
Drain-Source Voltage VDS   15 V
Gate-Source Voltage VGS   -5 V
Total Power Dissipation PT Tc = 25°C 7.5 W
Storage Temperature TSTG   -65 to +175  
Channel Temperature Tch   175  



Description

The FLC167WF is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.

Fujitsu's stringent Quality Assurance Program FLC167WF assures the highest reliability and consistent performance.




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