FLK107MH-14 Selling Leads, Price trend, FLK107MH-14 DataSheet download, circuit diagram from SeekIC.com

Features: • High Output Power: P1dB = 30.0dBm(Typ.)• High Gain: G1dB = 6.5dB(Typ.)• High PAE: add = 31%(Typ.)• Proven Reliability• Hermetic Metal/Ceramic PackageSpecifications Item Symbol Condition Rating Unit Drain-Source Voltage VDS 1...

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SeekIC No. : 004342069 Detail

FLK107MH-14: Features: • High Output Power: P1dB = 30.0dBm(Typ.)• High Gain: G1dB = 6.5dB(Typ.)• High PAE: add = 31%(Typ.)• Proven Reliability• Hermetic Metal/Ceramic PackageSpecifi...

FLK107MH-14 Data Sheet

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Part Number:: FLK107MH-14
Supply Ability:: 5000

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Upload time: 2024/4/26

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Product Details

Description

Features:

• High Output Power: P_1dB = 30.0dBm(Typ.)
• High Gain: G_1dB = 6.5dB(Typ.)
• High PAE: _add = 31%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package

Specifications

Item	Symbol	Condition	Rating	Unit
Drain-Source Voltage	V_DS		15	V
Gate-Source Voltage	V_GS		-5	V
Total Power Dissipation	P_T	Tc = 25°C	7.5	W
Storage Temperature	T_stg		-65 to +175
Channel Temperature	T_ch		175

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with gate resistance of 500.
3. The operating channel temperature (Tch) should not exceed 145°C.

Description

The FLK102MH-14 is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency.

Fujitsu's stringent Quality Assurance Program of FLK102MH-14 assures the highest reliability and consistent performance.

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FLK107MH-14

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