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FLL1200IU-3

Features: • Push-Pull Configuration• High Power Output: 120W (Typ.)• High PAE: 44%.• Broad Frequency Range: 2400 to 2500 MHz.• Suitable for class AB operationApplication• Solid State Base-Station Power Amplifier.• WLL Communication Systems.Specifications ...

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SeekIC No. : 004342072 Detail

FLL1200IU-3: Features: • Push-Pull Configuration• High Power Output: 120W (Typ.)• High PAE: 44%.• Broad Frequency Range: 2400 to 2500 MHz.• Suitable for class AB operationApplicatio...

FLL1200IU-3 Data Sheet

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Part Number:
FLL1200IU-3
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Push-Pull Configuration
• High Power Output: 120W (Typ.)
• High PAE: 44%.
• Broad Frequency Range: 2400 to 2500 MHz.
• Suitable for class AB operation


Application

• Solid State Base-Station Power Amplifier.
• WLL Communication Systems.


Specifications

Parameter
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
Tc = 25
187.5
W
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
+175

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 156.0mA and -57.6mA respectively with gate resistance of 10.
3. The operating channel temperature (Tch) should not exceed 145.


Description

The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers.

FLL1200IU-3 is uniquely suited for use in Wireless Local Loop (WLL) base station amplifiers as it offers high gain, long term reliability and ease of use.




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