FLM5964-35F

Features: ・High Output Power: P1dB=45.5dBm(Typ.)・High Gain: G1dB=9.0dB(Typ.)・High PAE: add=36%(Typ.)・Broad Band: 5.9~6.4GHz・Impedance Matched Zin/Zout = 50Ω・Hermetically Sealed PackageSpecifications Item Symbol Rating Unit Drain-S...

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FLM5964-35F Picture
SeekIC No. : 004342093 Detail

FLM5964-35F: Features: ・High Output Power: P1dB=45.5dBm(Typ.)・High Gain: G1dB=9.0dB(Typ.)・High PAE: add=36%(Typ.)・Broad Band: 5.9~6.4GHz・Impedance Matched Zin/Zout = 50Ω&...

floor Price/Ceiling Price

Part Number:
FLM5964-35F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/28

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Product Details

Description



Features:

・High Output Power: P1dB=45.5dBm(Typ.)
・High Gain: G1dB=9.0dB(Typ.)
・High PAE: add=36%(Typ.)
・Broad Band: 5.9~6.4GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package



Specifications

Item
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
115
W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C



Description

The FLM5964-35F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system.




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