FLM5972-8F Selling Leads, Price trend, FLM5972-8F DataSheet download, circuit diagram from SeekIC.com

Features: • High Output Power: P1dB = 39.0dBm (Typ.)• High Gain: G1dB = 8.5dB (Typ.)• High PAE: add = 31% (Typ.)• Low IM3 = -45dBc@Po = 28.0dBm• Broad Band: 5.9 ~ 7.2GHz• Impedance Matched Zin/Zout = 50Ω• Hermetically Sealed PackageSpecifications ...

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SeekIC No. : 004342100 Detail

FLM5972-8F: Features: • High Output Power: P1dB = 39.0dBm (Typ.)• High Gain: G1dB = 8.5dB (Typ.)• High PAE: add = 31% (Typ.)• Low IM3 = -45dBc@Po = 28.0dBm• Broad Band: 5.9 ~ 7.2GH...

FLM5972-8F Data Sheet

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Part Number:: FLM5972-8F
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/4/28

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Product Details

Description

Features:

• High Output Power: P1dB = 39.0dBm (Typ.)
• High Gain: G1dB = 8.5dB (Typ.)
• High PAE: add = 31% (Typ.)
• Low IM3 = -45dBc@Po = 28.0dBm
• Broad Band: 5.9 ~ 7.2GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package

Specifications

Item	Symbol	Condition	Rating	Unit
Drain-Source Voltage	V_DS		15	V
Gate-Source Voltage	V_GS		-5	V
Total Power Dissipation	P_T	Tc = 25°C	42.8	W
Storage Temperature	T_stg		-65 to +175
Channel Temperature	T_ch		175

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with gate resistance of 100Ω.

Description

The FLM5972-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

Eudyna's stringent Quality Assurance Program FLM5972-8F assures the highest reliability and consistent performance.

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FLM5972-8F

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