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FLM6472-12F

Features: • High Output Power: P1dB = 41.5dBm (Typ.)• High Gain: G1dB = 9.5dB (Typ.)• High PAE: add = 37% (Typ.)• Low IM3 = -46dBc@Po = 30.5dBm• Broad Band: 6.4 ~ 7.2GHz• Impedance Matched Zin/Zout = 50Ω• Hermetically Sealed PackageSpecifications ...

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SeekIC No. : 004342101 Detail

FLM6472-12F: Features: • High Output Power: P1dB = 41.5dBm (Typ.)• High Gain: G1dB = 9.5dB (Typ.)• High PAE: add = 37% (Typ.)• Low IM3 = -46dBc@Po = 30.5dBm• Broad Band: 6.4 ~ 7.2GH...

FLM6472-12F Data Sheet

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Part Number:
FLM6472-12F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High Output Power: P1dB = 41.5dBm (Typ.)
• High Gain: G1dB = 9.5dB (Typ.)
• High PAE: add = 37% (Typ.)
• Low IM3 = -46dBc@Po = 30.5dBm
• Broad Band: 6.4 ~ 7.2GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package


Specifications

Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
Tc = 25°C
57.6
W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C



Description

The FLM6472-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.




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