Features: · Organized as 32,768 x 8 bits· High endurance 10 Billion (1010) read/writes· 10 year data retention at 85° C· NoDelay™ write· Advanced high-reliability ferroelectric processApplicationAs a true nonvolatile RAM, the FM18L08 fits intomany diverse applications. Clearly, its monolithi...
FM1808: Features: · Organized as 32,768 x 8 bits· High endurance 10 Billion (1010) read/writes· 10 year data retention at 85° C· NoDelay™ write· Advanced high-reliability ferroelectric processApplicat...
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| Description | Ratings |
| Ambient storage or operating temperature | -40°C to + 85°C |
| Voltage on any pin with respect to ground | -1.0V to +7.0V |
| Lead temperature (Soldering, 10 seconds) | 300° C |
The FM1808 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. FM1808 provides data retention for 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. It's fast write and high write endurance makes it superior to other types of nonvolatile memory.
In-system operation of the FM1808 is very similar to other RAM based devices. Memory read- and writecycles require equal times. The FRAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM1808 is a truly monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the serious disadvantages associated with modules and batteries or hybrid memory solutions.
These capabilities make the FM1808 ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. The availability of a true surface-mount package improves the manufacturability of new designs, while the DIP package facilitates simple design retrofits. The FM1808 offers guaranteed operation over an industrial temperature range of -40°C to +85°C.