FM24C256-G

The FM24C256-G is a type of 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroele ctric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It offers reliable data retention for 45 years when eliminating the complexities, overhead, and EEPROM and other nonvolatile memories causes system level reliability problems. The FM24C256-G performs write operations at bus speed. No write delays are acurred. The next bus cycle may commence immediately without the need for data polling. What's more, the pro duct offers write endurance orders of magnitude higher than EEPROM. Also, FRAM exhibits much lower power during writes than EEPROM since write operations do not need an internally elevated power supply voltage for write circui ts.

Features of the FM24C256-G are:(1)256Kbit ferroelectric nonvolatile RAM:organized as 32,768 x 8 bits,high enduran ce 10 billion (1010) read/writes, 45 year data retention,noDelay writes,advanced high reliability ferroelectric process;(2)fast two-wire serial interface:up to 1 MHz maximum bus frequency,supports legacy timing for 100 kHz & 400 kHz;(3)low power operation:5V operation,200 A active current (100 kHz),100 A standby current;(4)industry standard configuration:industrial temperature is -40 to +85,8-pin EIAJ SOIC,
"Green" packaging option.