FM24CL16

The versatility of FRAM technology fits into many diverse applications. Clearly the strength of higher write endurance and faster writes make FRAM superior to EEPROM in all but one-time programmable applications. The advantage is most obvious in data collection environments where writes are frequent and data must be nonvolatile.

The FM24CL16 is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. FM24CL16 provides reliable data retention for over 10 years while eliminating the complexities, overhead,and system level reliability problems caused by EEPROM and other nonvolatile memories.

Unlike serial EEPROMs, the FM24CL16 performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. In addition, the FM24CL16 offers unlimited write endurance, orders of magnitude more endurance than EEPROM. Also, FRAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits.

These capabilities make the FM24CL16 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where a long write time can cause data loss. The combination of features allows the system to write data more frequently, with less system overhead.

The FM24CL16 is available in an industry standard 8-pin SOIC and uses a two-wire protocol. The specifications are guaranteed over the industrial temperature range from -40°C to +85°C. Although the FM24CL16 is functionally compatible with the 5V FM24C16, it offers 3V operation and up to 1MHz bus speed.