FM25L16-G

Packaging : Tube
Interface : SPI
Operating Temperature Range : - 40 C to + 85 C
Mounting Style : SMD/SMT
Operating Supply Voltage : 2.7 V to 3.6 V
Package / Case : SOIC-8
Organization : 2 K x 8
Memory Size : 16 KB


Pinout






Description

The FM25L16-G is a kind of 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. FM25L16-G provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

Features of the FM25L16-G are:(1) 16K bit ferroelectric nonvolative RAM;(2) very fast serial peripheral interface-SPI;(3) sophisticated write protection scheme;(4) low power consumption;(5) industry standard configuration.

The absolute maximum ratings of the FM25L16-G can be summarized as:(1): power supply voltage with respect to VSS(VDD) is -1.0V to +5.0V;(2): voltage on any pin with respect to VSS(VIN) is -1.0V to +5.0V and VIN < VDD+1.0V;(3): storage temperature(TSTG) is -55°C to + 125°C;(4): lead temperature (soldering, 10 seconds)(TLEAD) is 300° C; (5): package moisture sensitivity level is MSL-1.

The FM25L16-G is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. The features of FM25L16-G are as follows: (1)16K bit Ferroelectric Nonvolatile RAM; (2)Very Fast Serial Peripheral Interface - SPI; (3)Write Protection Scheme; (4)Device ID and Serial Number; (5)Low Power Consumption; (6)Industry Standard Configurations.

The following is about the absolute maximum ratings of FM25L16-G: (1)Power Supply Voltage with respect to VSS: -1.0V to +5.0V; (2)Voltage on any pin with respect to VSS: -1.0V to +5.0V and VIN < VDD+1.0V *; (3)Storage Temperature: -55°C to +125°C; (4)Lead Temperature (Soldering, 10 seconds): 300°C.

The electrical characteristics of the FM25L16-G are: (1)Power Supply voltage: 3.0 V min and 3.6 V max; (2)power Supply operating Current @ SCK = 1 MHz: 0.15 mA, @ SCK = 15.0 MHz: 3.0 mA; (3)Standby Current @ 85°C: 1A, @ 125°C: 10 A; (4)Input Leakage Current: ±1 A; (5)Output Leakage Current: ±1 A; (6)Input Low Voltage: -0.3 V min and 0.3*VDD max; (7)Input High Voltage: 0.7*VDD to VDD + 0.5 V.