FM93C46

Features: Wide VCC 2.7V - 5.5V Typical active current of 200A 10A standby current typical 1A standby current typical (L) 0.1A standby current typical (LZ) No Erase instruction required before Write instruction Self timed write cycle Device status during programming cycles 40 year data retention En...

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FM93C46 Picture
SeekIC No. : 004342484 Detail

FM93C46: Features: Wide VCC 2.7V - 5.5V Typical active current of 200A 10A standby current typical 1A standby current typical (L) 0.1A standby current typical (LZ) No Erase instruction required before Write ...

floor Price/Ceiling Price

Part Number:
FM93C46
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

 Wide VCC 2.7V - 5.5V
Typical active current of 200A
    10A standby current typical
    1A standby current typical (L)
    0.1A standby current typical (LZ)
No Erase instruction required before Write instruction
Self timed write cycle
Device status during programming cycles
40 year data retention
Endurance: 1,000,000 data changes
Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP



Pinout

  Connection Diagram


Specifications

Ambient Storage Temperature         -65°C to +150°C
All Input or Output Voltages                   +6.5V to -0.3V
with Respect to Ground
Lead Temperature
(Soldering, 10 sec.)                                          +300°C
ESD rating                                                            2000V



Description

FM93C46 is a 1024-bit CMOS non-volatile EEPROM organized as 64 x 16-bit array. This device features MICROWIRE interface which is a 4-wire serial bus with chipselect (CS), clock (SK), data input (DI) and data output (DO) signals. This interface is compatible to many of standard Microcontrollers and Microprocessors. There are 7 instructions implemented on the FM93C46 for various Read, Write, Erase, and Write Enable/Disable operations. FM93C46 is fabricated using Fairchild Semiconductor floating-gate CMOS process for high reliability, high endurance and low power consumption.




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