FMBM5551

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Configuration : Dual
Maximum Operating Frequency : 300 MHz
Collector- Emitter Voltage VCEO Max : 160 V
Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 80 at 1 mA at 5 V
Package / Case : Super SOT-6


Features:

• This device has matched dies
• Sourced from process 16.
• See MMBT5551 for characteristics


Specifications

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	160	V
VCBO	Collector-Base Voltage	180	V
VEBO	Emitter-Base Voltage	6	V
IC	Collector Current (DC)	600	mA
PC	Collector Dissipation (TC = 25°C)	0.7	W
TSTG	Storage Temperature Range	-55 to +150	°C
TJ	Junction Temperature	150	°C
TJA	Thermal Resistance, Junction to Ambient	180	°C/W

* Pd total, for both transistors. For each transistor, Pd = 350mW


Parameters:

Technical/Catalog Information	FMBM5551
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	160V
Current - Collector (Ic) (Max)	600mA
Power - Max	700mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	150mV @ 1mA, 10mA
Frequency - Transition	300MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SuperSOT-6
Packaging	Tape & Reel (TR)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FMBM5551 FMBM5551