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MFG:module  Package Cooled:MIT  D/C:05+  

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Part Number: FMG2G150US60E

 

MFG: module

Package Cooled: MIT

D/C: 05+

Description: Fairchild's Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switchin...


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FMG2G150US60E General Description


Fairchild's Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.

FMG2G150US60E Maximum Ratings

Symbol Description FMG2G150US60E Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage +20 V
IC Collector Current@ TC = 25°C 150 A
ICM(1) Pulsed Collector Current 30 A
IF Diode Continuous Forward Current @ TC = 100°C 150 A
IFM Diode Maximum Forward Current 300 A
TSC Short Circuit Withstand Time @ TC = 100°C 10 US
PD Maximum Power Dissipation @ TC = 25°C 500 W
TJ Operating Junction Temperature -40 to +150 °C
Tstg Storage Temperature Range -40 to +125 °C
Viso Isolation Voltage @ AC 1minute 2500 V
Mounting
Torque		 Power Terminals Screw : M5 2.0 N.m
Mounting Screw : M6 2.5 N.m
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature

FMG2G150US60E Features

• UL Certified No. E209204
• Short Circuit rated 10us @ TC = 100°C, VGE = 15V
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 150A
• High Input Impedance
• Fast & Soft Anti-Parallel FWD

FMG2G150US60E Typical Application

• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS

FMG2G150US60E datasheet

FMG2G150US60E
PDF/DataSheet Download

  • Datasheet: FMG2G150US60E
  • File Size: 657882 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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