FMG2G150US60E

IGBT Modules 600V/150A/Module

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SeekIC No. : 00142087 Detail

FMG2G150US60E: IGBT Modules 600V/150A/Module

floor Price/Ceiling Price

Part Number:
FMG2G150US60E
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Dual
Collector- Emitter Voltage VCEO Max : 600 V Collector-Emitter Saturation Voltage : 2.2 V
Continuous Collector Current at 25 C : 150 A Gate-Emitter Leakage Current : +/- 100 nA
Power Dissipation : 500 W Maximum Operating Temperature : + 150 C
Package / Case : 7PM-GA Packaging : Bulk    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector-Emitter Saturation Voltage : 2.2 V
Configuration : Dual
Continuous Collector Current at 25 C : 150 A
Packaging : Bulk
Power Dissipation : 500 W
Gate-Emitter Leakage Current : +/- 100 nA
Package / Case : 7PM-GA


Features:

• UL Certified No. E209204
• Short Circuit rated 10us @ TC = 100°C, VGE = 15V
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 150A
• High Input Impedance
• Fast & Soft Anti-Parallel FWD





Application

• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS





Specifications

Symbol Description FMG2G150US60E Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage +20 V
IC Collector Current@ TC = 25°C 150 A
ICM(1) Pulsed Collector Current 30 A
IF Diode Continuous Forward Current @ TC = 100°C 150 A
IFM Diode Maximum Forward Current 300 A
TSC Short Circuit Withstand Time @ TC = 100°C 10 US
PD Maximum Power Dissipation @ TC = 25°C 500 W
TJ Operating Junction Temperature -40 to +150 °C
Tstg Storage Temperature Range -40 to +125 °C
Viso Isolation Voltage @ AC 1minute 2500 V
Mounting
Torque
Power Terminals Screw : M5 2.0 N.m
Mounting Screw : M6 2.5 N.m
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature




Product Product status Eco Status Package type Leads Packing method Package Drawing Package Marking Convention**
FMG2G150US60E Lifetime Buy RoHS Compliant 7PM-GA 7 BULK TBD Line 1: $Y (Fairchild logo)
&4 (4-Digit Date Code)
Line 2: FMG2G150US60E Line 3: 150A600VIGBTKOR

Package marking information for product FMG2G150US60E is available. Click here for more information .





Description

Fairchild's Insulated Gate Bipolar Transistor (IGBT)FMG2G150US60E power modules provide low conduction and switching losses as well as short circuit ruggedness. FMG2G150US60E is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.






Parameters:

Technical/Catalog InformationFMG2G150US60E
VendorFairchild Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeScrew Mount
Package Name7PM-GA
Input TypeStandard
Collector Emitter Voltage (Vces)600.0 [Max]
Typical Vce(on) @ Vge, Ic2.2V @ 15V, 150A
Gate Emitter Voltage (Vge)20 [Max]
Collector Current (Ic)150.00 A [Max]
Collector Peak Current (Icm)300.000 A [Nom]
Power Dissipation500.000 W [Max]
PackagingBulk
Has Digi-ReelNot TR
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FMG2G150US60E
FMG2G150US60E



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