IGBT Transistors Molding Type Module
FMG2G300US60E_Q: IGBT Transistors Molding Type Module
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| Configuration : | Dual | Collector- Emitter Voltage VCEO Max : | 600 V | ||
| Collector-Emitter Saturation Voltage : | 2.1 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
| Continuous Collector Current at 25 C : | 300 A | Gate-Emitter Leakage Current : | +/- 100 nA | ||
| Power Dissipation : | 892 W | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | 7PM-HA-7 | Packaging : | Bulk |